MRAM Research at VLSI 2018

from blog Real World Tech, | ↗ original
At VLSI 2018, researchers from TDK and TSMC described advances in Magneto-resistive memory (MRAM). TDK focused on new materials to improve writing for low-voltage MRAM cells at small geometries. A team from TSMC showcased circuit techniques to improve read performance of MRAM arrays despite process variability and a small read window. The post...